ESD robustness of thin-film devices with different layout structures in LTPS technology
نویسندگان
چکیده
The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel. 2006 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 46 شماره
صفحات -
تاریخ انتشار 2006